NTE308P integrated thyristor/rectifier (itr) tv horizontal deflection & commutating switch absolute maximum ratings: repetitive peak forward off?state voltage (t c = +85 c, note 1), v drm 750v . . . . . . . . . . . . . . . . . . repetitive peak reverse voltage (t c = +85 c, note 1), v rrm 700v . . . . . . . . . . . . . . . . . . . . . . . . . . mean on?state current (t c = +60 c, 50hz sine wave, conduction angle of 180 ), i o , i t(av) rectifier 3.0a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . scr 5.0a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . rms on?state current (t c = +60 c, 50hz sine wave, conduction angle of 180 ), i f(rms) , i t(rms) rectifier 4.5a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . scr 8.0a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . surge current (t c = +85 c, one full cycle), i tsm , i fsm 60hz sinusoidal 80a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50hz sinusoidal 70a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . rate of change of on?state current (v d = 700v, i gt = 50ma, t r = 0.1 s), di/dt 200a/ s . . . . . . . . . peak forward gate power (negative gate bias = ?10v, 10 s max, note 2), p gm 25w . . . . . . . . . . peak reverse gate power (negative gate bias = ?10v, 10 s max, note 2), p rgm 25w . . . . . . . . operating case temperature range, t c ?40 to +85 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature range, t stg ?40 to +150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . maximum thermal resistance, junction?to?case, r thjc 2.5 c/w . . . . . . . . . . . . . . . . . . . . . . . . . . . . lead temperature (during soldering, 1/8? from case, 10sec max), t l +225 c . . . . . . . . . . . . . . . . . . note 1. these values do not apply if there is a positive gate signal. gate must be open or negatively biased. note 2. any pr oduct of gate current and gate voltage which results in a gate power less than the maxi- mum is permitted, provided that the maximum reverse gate bias (as specified) is not exceeded. electrical characteristics: (t c = +25 c ?maximum ratings? unless otherwise specified) parameter symbol test conditions min typ max unit peak forward blocking current i drm v d = 700v, t c = +85 c ? 0.5 1.5 ma instantaneuos voltage rectifier v f i f = 10a ? 1.35 2.0 v scr v t i t = 30a ? 1.75 3.0 v gate trigger current, continuous dc i gt anode voltage = 12v, r l = 30 ? ? 15 45 ma gate trigger voltage, continuous dc v gt anode voltage = 12v, r l = 30 ? ? 1.8 4.0 v
electrical characteristics (cont?d): (t c = +25 c ? maximum ratings ? unless otherwise specified) parameter symbol test conditions min typ max unit rate of rise of off ? state voltage dv/dt v d = 700v, v g = ? 2.5v, t c = +85 c 1000 ? ? v/ s reverse recovery time (rectifier only) t rr i fm = 10a, ? di f /dt = ? 10a/ s, t p = 3 s 0.5 0.7 ? s circuit commutated turn ? off time t q minimum negative gate bias = ? 2.5v, dv/dt = 400v/ s, t c = +80 c, note 3 ? ? 4.2 s note 3. turn ? off time increases with temperature; therefore, case temperature must not exceed the level indicated. .250 (6.35) max .500 (12.7) max .500 (12.7) min .110 (2.79) .420 (10.67) max .070 (1.78) max gate .100 (2.54) anode/tab cathode .147 (3.75) dia max
|
